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《zno：al透明導(dǎo)電薄膜的自由基輔助磁控濺射制備工藝及性能表征》由會(huì)員上傳分享，免費(fèi)在線閱讀，更多相關(guān)內(nèi)容在應(yīng)用文檔-天天文庫。
1、摘要(1)金屬Zn濺射靶材表面氧化狀態(tài)的改變是引起濺射工藝不穩(wěn)定的主要原因。樣品鼓轉(zhuǎn)速的變化可以改變真空室內(nèi)的氧氣分布，引起靶材表面狀態(tài)的改變，從而導(dǎo)致放電電壓的變化。(2)AZO薄膜的透過率與薄膜的氧化程度密切相關(guān)，而Al的有效摻雜是決定AZO薄膜導(dǎo)電性的重要影響因素：AZO薄膜載流子遷移率的大小取決于薄膜的中性雜質(zhì)濃度的大小。(3)利用磁控濺射獲得的AZO薄膜，在氫氣氣氛中經(jīng)550oC退火處理后，樣品的電阻率達(dá)到6．45×10。4Q·cm，550nm波長的透射率達(dá)到85．7％，達(dá)到了可實(shí)用的技術(shù)指標(biāo)。關(guān)鍵詞：透明導(dǎo)電薄膜、ZnO：AI、AZO
2、、載流子濃度、遷移率、中性雜質(zhì)散射、摻雜效率、退火處理IIAbstractAbstractTransparentconductiveZnO：A!(AZO)filmwasusedinthefieldsofsolarcellsandflatpaneldisplay,becauseofitsexcellentelectricalandopticalproperties．AZOfilm，withtheadvantagesofcheapandabundantrawmaterials，andnon-toxic，isconsideredtobethebestc
3、andidatesforsubstitutingITOfilms．Radicalassistedmagnetronsputteringcoater(RASforshort)isanewtypeofcoater．ARAShastheadvantagesofhighdepositionrate，lowCOStandmassproductionability．Therefore，studiesonthefabricationprocessesofAZOfilmsareveryimportantforindustrialapplications．This
4、dissertationstudiedtheinfluencesoftargets，oxygenpartialpressure，A1content，sputteringpowerandpost-annealingtreatmentonthepropertiesofAZOfilms．ProcessparametersoffabricatingAZOfilmsbyR．ASwerestudied，andtheobtainedAZOfilmswerecharacterized．Thedissertationconsistsoffivechapters：I
5、nChapter1，transparentconductivefilmsandtheresearchhistorywerebrieflyintroduced．MethodsoffabricatingZnO：AIfilmsandtheadvantagesofAZOfilmsdepositedbyRASalsoweregiven．Factorswhichaffectingthestabilityofdischargevoltageduringdepositionprocesseswerealsointroduced．InChapter2，weintr
6、oducedthebasicprincipleandmainparametersoftheRASsputteringcoater,aswellasthedepositionparametersofAZOsamples．Thevariouscharacterizationtechniques，includingXRD、SEM、XRF、UV-Vis—IR、XPS、VanderPauwmethodetc．werealsointroducedInChapter3，effectsofoxygenflowrateonthedischargevoltageof
7、ZntargetandA1target，andtherotationspeedofthesampledrumonthestabilityofdischargevoltagewerestudied．InChapter4，theprocessesoffabricatingAZOfilmsbyZnandAItargetswerestudied．TheeffectsofAIcontent，oxygenpartialpressure(bychangingtheArflowrateoroxygenflowrate)andpost-annealingtreat
8、mentontheelectricalandopticalpropertiesofAZOfilmswereinvestigated．ⅡI
