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1、ABSTRACTABSTRACTWiththeadvanceofinformationtechnologyanddigitalelectronicproducts,therehasbeenallincreasingdemandforelectronicdevicesandbasicmaterialsusedinthem.Uptonow,SIP(systeminpackage)technologyisstillthemaintechnologyinfabricationofmonolithicintegratedcircuits(MIC)technologydueto2Dind
2、uctorsoccupytoolargeareainMICboards.Inordertominiaturizethesize,toreducethepower,toenhancethereliabilityofelectromagneticdevices,andtoincreasethedatatransmissionrate,MICtechnologymustbeconvertedfromSIPtoSOC(systemonchip).Thekeyfactor,whichaffectsthisconversion,isthesizeofinductors.Theinduct
3、orshouldexhibitlargeenoughinductanceandshouldbesmallenoughtobeintegratedintocircuit.Magneticmaterialsgiverisetoanincreaseofinductancesothatitcaneffectivelyminiaturizethesizeofinductors.Therefore,themagneticinductorsarewidelyemployedinSOCtechnologyInthedissertation,MnZnferritefilmsweredeposi
4、tedbyRFmagnetronsputtering.Wefocusedontheimpactofannealingprocessonthefilmandgotsomeexcellentperformanceparameters.MnZnferritefilmwasdepositedwiththedifferentthickness,thedifferentcomponentsandonthedifferentsubstratesbasedontheoptimizationofprocessparameters.Firstly,theprocessoftheMnZnferri
5、tetargetandfilmswasdescribed,thentheannealingprocessofthefilmwasinvestigatedforthefilmproperties,includingtheannealingpressure,annealingtemperature,annealingheatingrate,annealingoxygencontent,andthecomparisonvacuumannealingwithatmosphericpressureannealing.MnZnferritefilmsweredepositedonthes
6、ubstratewithdifferentthicknessesincluding180nm,320nm,450nm,800nm,1120nmandthephasestructure,microstructure,magneticpropertieswerestudied.Mn0.5Zn0.5Fe2O4ferritefilmsweredepositedonthedifferentsubstratesincludingSi(100),SiO2/Si,MgAl2O4(100),MgAl2O4(111),MgO(100)thepreferredorientationandmagne
7、ticpropertieschangewereanalyzed.MnZnferritefilmsweredepositedunderthedifferentcomponentsofthetargetandthemagneticproperties,phasestructure,frequencycharacteristicswereinvestigated.III萬方數(shù)據(jù)ABSTRACTAccordingtotheresearchresults,thebestannealingconditiontoim