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1、EtchingProcess1Contents?EtchingIntroduction?DryEtchingProcess?WetEtchingProcess?CleaningProcessIntroduction?Summary2?EtchingIntroduction(4)曝光、顯影(1)基板表面平坦化薄膜區(qū)(5)蝕刻（DryorWet）(2)鍍膜黃光區(qū)(3)上光阻(6)去光阻（Wet）蝕刻區(qū)3EtchProfile4DryEtchvs.WetEtch￠ComparisonofEquipmentComparisonofDryEtchWet
2、etchEquipmentInitialCostHighLowFootPrintSmallLargeRunningCostLowHighThroughputLowHighUp-TimeHighHigh5DryEtchvs.WetEtch￠ComparisonofProcessComparisonofProcessDryEtchWetetchEtchRateLowHighUniformityGoodPoorRepeatabilityGoodPoorCDLossSmallLargeSelectivitytoUnderLayerPoorGoodPr
3、ofileControlGoodVeryPoorMultiLayerEtchPossibleDifficult6EtchingMechanism（1）7EtchingMechanism（2）8Contents?EtchingIntroduction?DryEtchingProcessDryEtchingProcess?WetEtchingProcess?CleaningProcessIntroduction?Summary9DryEtch–WhatisPlasma?￠Plasma-?◆Aplasmaisa“quasi-neutral”gaso
4、fchargedandneutralparticleswhichexhibits“collectivebehavior”.-◆指一個(gè)遭受部分離子化的氣體；氣體的組成，有各種帶電荷的電子、離子(Ion)，及不帶電的分子和原子團(tuán)(Radicals)等，其總帶電量為零。10DryEtch–WhatisPlasmaetch??◆產(chǎn)生Plasma三要素:RFPower/ElectrodeSpace/LowPressure11NonmetallicEtchingFilmEtchantSelectivityα-SiSF/O62CF4/O2Cl2/O250:
5、1HBr/O2100:1SiNxSF6/O2goodCF4/O2NF3/O2CHF3/CH2F2/O2TEOS&SiOxCF4/O2CHF3/O2C4F812MetallicEtchingFilmEtchantAl&TiBCl3/Cl2BCl3enhancetheetchabilityofmetaloxideininitiateetchingCrCl2/O2ResidualCl2exposureinatmospherichumiditytoformHCl,whichcorrodethemetal.MoW&MoSF6/CF4/O2Cl2/O2I
6、TOCH4/H2Cl2HIHBr13SiOxmechanism14WhataretheconcernsforDryetching？￠Uniformity&Etchingrate￠Taperprofilecontrol￠CDlosscontrol￠Selectivity￠Plasmadamage￠PRremoval￠Residue￠EPDcontrol15TaperProfileControl16TaperProfileControl17TaperProfileControl18TaperProfileControl￠Stepcoverage1
7、9TaperProfileControl￠Taperingfeaturebyresisterosion20CDLossControl￠CriticalDimensionLoss◆黃光製程完成後原本是10um的線，經(jīng)過蝕刻製程後量測(cè)，線寬變?yōu)?um，則CDLoss為1um。◆線寬越來(lái)越小時(shí)，CDLossControl則更為重要?！鬞aper會(huì)影響線寬?！舢?dāng)線寬變小時(shí)，Taper較不重要，CDLoss則較為重要。21Selectivity22PlasmaDamage￠PRafterImplantation23PRRemoval￠PRRemoval
8、Issue◆Iondopping製程完成後，光阻會(huì)有無(wú)法去除的問題，尤其是在高劑量及長(zhǎng)時(shí)間的製程後?！羟g刻製程如果蝕刻時(shí)間過久，也會(huì)有光阻去除的問題。◆濕蝕刻時(shí)，
