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1、ProcessReference:MichaelQuirkandJulianSerda,“SemiconductorManufacturingTechnology”,Prentice-Hall,Inc.,NewJersey,2001.Theprocessflowforsemiconductormanufacturingisbestconsideredintwosections,the"front-end"andthe"back-end"半導(dǎo)體製成通常分為＂前段＂與＂後段＂The“front-end”iswaferprocess
2、ingwhichisperformedinaWaferFabarea.Theprocessofwaferfabricationisaseriesof16-24loops,eachputtingdownalayeronthedevice.Eachloopcomprisessomeorallofthemajorstepsofphotolithography,etch,strip,diffusion,ionimplantation(植入),deposition,andchemicalmechanicalplanarization.前
3、段主要在潔淨室進行，包含16-24個環(huán)節(jié)，每個環(huán)節(jié)都要重複photolithography,etch,strip,diffusion,ionimplantation(植入),deposition,andchemicalmechanicalplanarization這些步驟。Ateachstage,therearevariousinspections(檢查)andmeasurementsperformedtomonitortheprocessandequipment.Supportingtheentireprocessisaco
4、mplexinfrastructureofmaterialssupply,waste(消耗)treatment,support,logistics,andautomation.Ithasthecleanestenvironmentintheworld-manytimescleanerthanthebesthospitaloperatingtheater.每個步驟都有嚴謹?shù)臋z查與測量，隨時監(jiān)控製程與設(shè)備。這個產(chǎn)業(yè)鍊是相當複雜的供應(yīng)與維護。而它的潔淨程度也是世界上所有產(chǎn)業(yè)之最，要比最乾淨的醫(yī)院還要乾淨好幾倍。AFabisoneof
5、themostcomplexindustrialfacilitiestobefoundanywhere.Astate-of-the-artFab,costingover$1billion(10億),hasadensercapitalpersquarefootthananyindustry.半導(dǎo)體製程的Fab是世界上最貴的設(shè)備，一個state-of-theartFab造價超過一億美元。The"back-end"isTest,AssemblyandPackaging,wherethefinishedwaferissplitupin
6、toindividualdie(chips)whicharethenassembledintopackageswhichcanbehandledinthefinalapplications.Fullfunctionalelectricaltestisperformedatbothwaferandpackageleveltoensureoutgoingquality.後段則是測試、組裝與封裝。已經(jīng)做完的晶元送到後段去作晶元切割及電氣特性測試，最後封裝成完整電子零件以供電路使用。Oxidation(氧化)Oxidationisim
7、portantforsiliconsemiconductorfabricationbecauseofitseaseofformationanditsexcellentinterfacewithunderlyingsiliconmaterial.Itisthemostcommonlayerusedinsemiconductorfabrication.氧化層是矽晶元製程很重要的步驟，因為氧化層與矽晶元有很好的接著。Differentwaysinwhichanoxidelayerisusedtofabricateamicrochip
8、are:Oxidation(氧化)?Devicescratch(刮傷)protectionandcontaminant(污染物)isolation.?Fieldisolationtoconfinechargedcarriers.?Dielectricmaterialinthe
