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1、------------------------------------------------------------------------------------------------鎢含量對磁控濺射銅鎢合金薄膜結(jié)構(gòu)和性能的影響_郭中正(1)第35卷第4期2011年4月機 械 工 程 材 料Materials for Mechanical EngineeringVol.35 No.4Apr. 2011鎢含量對磁控濺射銅鎢合金薄膜結(jié)構(gòu)和性能的影響郭中正,孫勇,周鋮,段永華,彭明軍(昆明理工大學(xué)云南省新材料制備與加工重點實驗室,昆明650093)摘 要:用磁控濺射法制
2、備銅鎢合金薄膜,采用能譜儀、X射線衍射儀、透射和掃描電鏡、電阻計和顯微硬度儀等對合金薄膜的成分、結(jié)構(gòu)和性能進行了表征,探討了鎢原子分數(shù)的影響。結(jié)果表明:含原子分數(shù)31.8%～54.8%鎢的銅鎢膜呈非晶態(tài),表面較平整;含18%和60%鎢的膜為晶態(tài),且出現(xiàn)固溶度擴展,分別存在fccCu(W)亞穩(wěn)過飽和固溶體和bccW(Cu)固溶體,銅鎢膜電阻率高于純銅膜的,非晶銅鎢膜電阻率較晶態(tài)膜高1.9倍以上;銅鎢膜硬度與鎢含量呈正相關(guān),非晶及晶態(tài)銅鎢膜硬度分別低于和略高于Voigt公式的計算值?！?--------
3、---------------------------------------------------------------------------------------關(guān)鍵詞:銅鎢合金;薄膜;固溶度;電阻率;顯微硬度中圖分類號:TB43;TG146.4文獻標(biāo)志碼:A文章編號:1000-3738(2011)04-0020-05InfluenceofWContentonStructureandPropertiesofCu-WAlloyThinFilmsDepositedbyMagnetronSputteringGUOZhong-zheng,SUNYong,ZHOUChe
4、ng,DUANYong-hua,PENGMing-jun(KeyLabofAdvancedMaterialsYunnanProvince,KunmingUniversityofScienceandTechnology,Kunming650093,China)Thecomposition,structureandpropertiesofCu-WthinfilmsfabricatedbymagnetronsputteringAbstract:——————————————————————————————————————------------------------------
5、------------------------------------------------------------------werecharacterizedbyEDX,XRD,TEM,SEM,resistancemeterandmicrohardnessinstrument.TheeffectofWatomfractionwasdiscussed.TheresultsshowthatCu-Wthinfilmswith31.8at%-54.8at%Wwereamorphousandhadsmoothsurface.Thinfilmswith18at%Wand60a
6、t%WwerecrystallinestatewithsolidsolubilityexpansioninthefccCu(W)metastablesupersaturatedsolidsolutionandbccW(Cu)solidsolution,respectively.TheelectricalresistivityofCu-WthinfilmswashigherthanthatofpureCufilms,andtheresistivityofamorphousCu-Wthinfilmswasover1.9timeshigherthanthatofcrystall
7、inefilms.ThemicrohardnessofCu-WthinfilmswascorrelatedpositivelywithWcontent,thehardnessofamorphousandcrystallineCu-WthinfilmswaslowerandslightlyhigherthanthecalculatedvaluesbyVoigtfomula,respectively.Cu-Walloy;thinfilm;solubility;electricalresistivity;microhardnessK
