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《電化學(xué)沉積制備zno納米晶薄膜及其性能研究》由會(huì)員上傳分享，免費(fèi)在線(xiàn)閱讀，更多相關(guān)內(nèi)容在學(xué)術(shù)論文-天天文庫(kù)。
1、南京航空航天大學(xué)碩士學(xué)位論文摘要以硝酸鋅和硝酸鉀混合溶液為電解液，采用兩電極體系在FTO基片和p-Si(100)襯底上制備了c-軸取向的ZnO薄膜。通過(guò)改變電沉積過(guò)程的各種參數(shù)，獲得了具有不同形態(tài)和性能的ZnO納米晶薄膜。研究發(fā)現(xiàn)，改變沉積電壓和外加超聲振動(dòng)能夠?qū)Ρ∧さ男蚊埠徒Y(jié)構(gòu)產(chǎn)生強(qiáng)烈的影響；不同沉積電壓下的薄膜生長(zhǎng)方式不同，在較低電壓下，薄膜生長(zhǎng)方式為島狀生長(zhǎng)；隨著沉積電壓的升高，薄膜的生長(zhǎng)方式由島狀變?yōu)閸u狀－層狀相結(jié)合的方式生長(zhǎng)；當(dāng)沉積電壓達(dá)到2.8V以后，薄膜按照層狀方式生長(zhǎng)。本文用X射線(xiàn)衍射、掃描電子顯微鏡、紫外－可見(jiàn)
2、和紫外－熒光分光光度計(jì)分析了薄膜的相結(jié)構(gòu)，晶粒尺寸、光學(xué)性能與發(fā)光特性。發(fā)現(xiàn)薄膜的(002)衍射峰隨著沉積電壓的增加而顯著增強(qiáng)；從掃描電鏡照片可以看出，薄膜中晶粒為典型的六方柱狀結(jié)構(gòu)，不同樣品的晶粒尺寸介于100~400nm之間。由于晶粒度大小不同，納米晶薄膜的光學(xué)禁帶寬度介于3.32~3.34eV。隨著沉積電壓的升高和沉積時(shí)間的延長(zhǎng)，薄膜晶體顆粒逐漸長(zhǎng)大，光學(xué)透過(guò)率降低。若在沉積過(guò)程中引入超聲波，由于受到超聲振動(dòng)的抑制，薄膜晶粒的尺寸下降。若對(duì)襯底進(jìn)行選擇性腐蝕，使薄膜在生長(zhǎng)初期有選擇地成核，則可以制備納米花狀的ZnO納米晶薄
3、膜，其熒光受激發(fā)光有藍(lán)移現(xiàn)象。在對(duì)ZnO/Si異質(zhì)結(jié)施加電壓時(shí)，異質(zhì)結(jié)呈現(xiàn)明顯PN結(jié)特性；在對(duì)ZnO/Si異質(zhì)結(jié)加以光照時(shí)，異質(zhì)結(jié)呈現(xiàn)了顯著的光生電流特性。關(guān)鍵詞：ZnO，電沉積，超聲波，異質(zhì)結(jié)，受激發(fā)光，納米晶薄膜，光生電流效應(yīng)i電化學(xué)沉積制備ZnO納米晶薄膜及其性能研究AbstractAtwo-electrodesystemwasemployedtofabricatec-axisorientedZnOfilmsonaFTOwaferandp-Si(100)substrateinamixedZn(NO3)2/KNO3aqueo
4、uselectrolyte.WeobtainedZnOnano-crystalinefilmswithdifferentmorphologyandcharacteristicsbyadjustingtheparametersintheelectrodepositionprocess.Itwasdiscoveredthemorphologyandstructurewerestronglyaffectedbyadjustingdepositionvoltageandapplyingultrasonicwave.Thefilmgrow
5、thmodewasdifferentatdifferentvoltage,whichisislandgrowthatlowervoltageandlayergrowthathighervoltage.Withtheincreaseofvoltage,thegrowthmodewouldundergoagradualtransitionfromislandmodetoisland-layercombinedmode,andthentolayermodelastifvoltagewashigherthan2.8V.Inthispap
6、er,X-raydiffraction,scanningelectronmicroscopy,UV-VISandUV-FLUspectroscopywereemployedtoanalyzethephasestructure,surfacemorphology,opticalabsorptionandstimulatedluminescenceproperties,respectively.Itwasfoundthatthe(002)peakintensityofXRDpatternsincreasedapparentlywit
7、htheincreaseofdepositionvoltage.Thegrainshapesweretypicallyhexagonalindifferentsampleswiththegrainsizebetween100~400nm.Theopticalbandgapofnano-crystallinefilmsisbetween3.32~3.34eV,duetodifferentgrainsizes.Thegrainsizesoffilmweregrowingupandthetransmittancewiththeincr
8、easingofdepositionvoltageandtime.Ifappliedultrasonicwavetothedepositionprocess,thegrainsizeoffilmsdecreased,becausetheinhibitoryeff
