資源描述：
《硅納米線陣列的制備與光伏應(yīng)用的分析》由會員上傳分享，免費在線閱讀，更多相關(guān)內(nèi)容在行業(yè)資料-天天文庫。
1、———————————————』墮墮一AbstractPhotovoltaictechnologyisoneoftheeffectivewaystOsolvetheener譬y嘶SjsandenVlronmentalpollution。Atpresent，crystallinesiliconsolarcellsremaillthebastsofthecurrentphotovoltaicindustry．However,thehighcostofcrystallinesiltconsolarceJJ8hasg
2、reatlyhinderedthedevelopmentofthephotovoltaicindus魄Siliconnanowires(SiNWs)areconsideredaspromisingmaterialstoacbievehigheffictencⅥJowcOStsolarcells，duetotheirexcellentlightabsorbingpropertiesande伍cientcafTlerseparationperformance．Therefore，theresearchonsili
3、connanowirearravsforpnotoVoltaicapplicationsisverymeaningful．Inthispaper,t11eantirenectionpropertiesofSiNWsarray,solarcellperformance,aswellassu—hceDassivationofSiNWsarrayhasbeenresearched．Theresultsweobtainedareasfoilo、vS：(1)mSiNWsarraycanbecreatedbymetal．
4、assistedchemicaletching(MACE)astheAgnanoparticlesfilmverticallysink．Theleng_tllofSiNWsarrayscanberegulatedbyadjustingtheetchingtime．withetchingtimeforsiliconsubstrates，ThelengthsofSiNWsarmyincreaselinearlySiliconnanowirearrayshasalowreflectance(<1％)overawid
5、erange(300-1000nm)．TheSiNWarraysoflongerlengthhaVeloWerreflectaIlcemourinvestigatedlengthrange．TheSiNWsolarcellexhibitsahigherpowerconversionefficiencyof8．84％thanthecellbasedonpolishedsiliconwafer，underthesameconditionofcompactcontactofthefrontsurfaceelecn．
6、ode．Wef-oundthatthereasonfortheincreaseofcellefficiency,inadditiontotheexcellentantireflectionpropertiesofSiNWsarrays，istheimprovedlong．wavelengthsunlightabsorptionwhichreducestherecombinationofminoritycarrier．(2)ThelengthoftheSiNWsarraysCanbemanipulatedbya
7、djustingtllereactiontime·FlaereflectancedecreaseswiththeSiNWs’lengthincreasing．Bvcombiningthermaloxidationandhydrofluoricacidtreatment，wecanmaIliDulatetllefillingratioofSiNWs．WiththeSiNWs’fillingratiodecreasing，therefleclancedecreasesatfirst，andthenincrease
8、s．Si／Si02coaxialnanowiresarraycanbeobtainedbythermaloxidationofas-grownSiNWsarray．Theresultsshowmat廿1esilicondioxideshellCannotonlyfurtherreducethereflectanceofSiNWsarray,butalsopasslVatesurfacestateso
