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1、摘要水熱3小時時，生長的是有尖椎的ZnO納米棒，此種納米結(jié)構(gòu)穩(wěn)定性要強(qiáng)于線狀結(jié)構(gòu)，但發(fā)射效能有一定差距。5.以制備的ZnO納米線作為陰極，用清洗后的硅片作為陽極，制成一個類似二極管結(jié)構(gòu)的場發(fā)射器件，并測試其場發(fā)射特性。通過測得的數(shù)據(jù)繪制了場發(fā)射的J-E和F-N曲線，還得到了樣品的閥值電場和開啟電場。在上述基礎(chǔ)上，通過得到的J-E和F-N曲線和樣品的電子掃描電鏡結(jié)果分析了其對樣品場發(fā)射特性的影響因素，一維ZnO納米線場發(fā)射主要受材料的場屏蔽效應(yīng)和幾何形貌的影響，并通過增強(qiáng)因子的理論公式得到，場增強(qiáng)因子的大小直接決定場發(fā)射特性好壞，這基本與實驗結(jié)果一致。關(guān)鍵字：射頻磁控濺射，水熱生長法
2、，ZnO納米線，場發(fā)射特性II萬方數(shù)據(jù)ABSTRACTABSTRACTTheone-dimensionalnanomaterialswithmanyuniquepropertiesisusedinpreparationforfieldemissioncoldcathodematerial,ithadtogaintheattentionandconcernbyalargenumberofdomesticandforeignresearchers.FieldemissionpropertiesofhydrothermalsynthesisofZnOnanowireiscurrently
3、ahottopicinthefieldofvacuummicronanoelectronic.Oneofthemainreasonsistheuseofhydrothermalmethodcanbeimplementedinnanowire-temperaturepreparationoflargearea(<100°C)ondifferentsubstratessuchasglassandmetal,itisveryconducivetothedevelopmentofvacuummicro-nanoelectronicstructureelectronicdevicesandf
4、ieldemission.Zincoxide(ZnO)isII-VIfamilydirectandwidebandgapcompoundsemiconductormaterialhavingexcellentchemicalandphysicalproperties,becauseofitssuperioraspectratio,itisverysuitableforapplicationinthefieldemissiondevice.Therefore,thestudyofthefieldemissionpropertiesofzincoxidenanowiresisveryn
5、ecessary,andhasconsiderablepracticalsignificanceandapplicationvalue.Thisarticlewaspreparedone-dimensionalzincoxidenanowireswithusingRFmagnetronsputteringandhydrothermal,theirresearchconductedfieldemissionproperties.Workandresearchmainlyincludesthefollowingaspects:1.Ananalysisofthemechanismofth
6、eone-dimensionalZnOnano-arraytoimprovethefieldemissioncharacteristics,andbycontrast,todiscusstheadvantagesanddisadvantagesofZnOnanowirescomparedtootherfieldemissionmaterials.2.Describesthepreparationmeansoftheone-dimensionalZnOnanowirearrays,selecthydrothermalsynthesisofZnOnanowirearraystructu
7、re,samemolofzincoxidepowderandhexamethylenetetramineashydrothermalreactionsolutionsolute.3.Itusedhydrothermalmethodofsynthesisofvariousmorphologiesofzincoxide(ZnO)nanowiresonsiliconsubstratewithzincoxidethinfilmscoated.ZnOthinfilmisused
