[應(yīng)用]電機(jī)二乙電子學(xué)_場(chǎng)效電晶體小信號(hào)分析(98-3-15)解答

《[應(yīng)用]電機(jī)二乙電子學(xué)_場(chǎng)效電晶體小信號(hào)分析(98-3-15)解答》由會(huì)員上傳分享，免費(fèi)在線閱讀，更多相關(guān)內(nèi)容在工程資料-天天文庫(kù)。

1、1.繪出P型增強(qiáng)型MOSFET電晶體之符號(hào)與小信號(hào)模型等效電路？（20分）p-typeMOSFET之符號(hào)p-typeMOSFET之等效電路ConsidertheJFETtransistorwithparametersloss=12mA,Vp=-4V,andA=0.008V^LetId=3mA.Determinegmandroatthe0-point.2.某一個(gè)JFET之規(guī)格為Idss=12mA,VP=?4V,X=0.008V1,ID=3mA,求小訊號(hào)模型參數(shù)師、ro之值？Sol:-2%JiDSS?‘D—=3mA/V(m-4ormS)==41?7￡0XID(0.0

2、08)(3加)Considerthesource-followercircuitinFigureP4.34withtransistorparametersVTN=1.2,Kn=mA/V2,andA=0.01V-l.IfIQ=1mA,determinethesmall-signalvoltagegainAv=vo/viandtheoutputresistanceRo.ForthecircuitshowninFigureP4.27,thetransistorparametersare=0.01廠.(a)Plotthesmall-signalequivalentci

3、rcuit,(b)Determinegmandroatthe0-point.(c)Determinethesmall-signalvoltagegainAv=v()/vj?(d)DetenninetheoutputresistanceRo.求(1)繪出小信號(hào)分析等效電路。(2)小訊號(hào)模型參數(shù)gm.r0之值？(3)小訊號(hào)電壓增益Av=^=?(4)輸出阻抗心=?(40分)1.如圖，已知MOSFET之規(guī)格為V{h=1.5V,k=0.5—,2=O.Oir'1求(1)小訊號(hào)電壓增益Av二彳■二？(2)輸入阻抗尺=?(3)輸出阻抗心=?解：(1)直流分析：29.1^70.%+

4、29.1廠"VoTVGS>Vth,假設(shè)MOSFETI作於飽和區(qū)Id=k(Vgs?Vth)2=0.5m(2.91-1.5)2=1(mA)Vds二Vdd■IdxRd=5VVDS(sat)=(VGS-Vth)=1.41(V)VDS>VDS(sat)工作於飽和區(qū)，假設(shè)正確。小訊號(hào)模型參數(shù)％177-(O.oi)(lm)~1°°m=2V0.5/?7-l/77=1.41—小訊號(hào)等效電路rRJIR.】%+(尺///?2)R}IIR2傀+(人//凡)=-5.62⑵輸入阻抗4=K〃/?2=20.6kO(3)?/獨(dú)立電源V.=0.-.gmVGs=0輸出阻抗=////??=4.76kOo

5、4.43Forthecommon-gatecircuitinFigureP4.43,theNMOStransistorparametersare:Vtn-1V,Kn=3mA/V?,andA=0.(a)DetermineIdqandVdsq.(b)Calculategmandro.(c)Findthesmall-signalvoltagegainAv-VolVi?ForthecircuitinFigure5,thetransistorparametersare:Vtn=1V5Kn=3mA/V[andA=0.(a)DetermineIdqandVdsq?(b)Calc

6、ulategmandro.(c)Findthesmall-signalvoltagegainAv=v0/vj.4.43a.”GS+1DQRs=55-忌=(10)(3)(總-2&+1)30”鳥(niǎo)—59倫$+25=059±>r-4(30)(25Ui35vgs2(30)Idq—(3)(1.35—1)-二>ID0—0.365inA%sq=10—(0.365)(5+10)nVDSO=4.53Vb.久=2憑忌=27(3)(0.365)ng,”=2.093mA?11一7*二=ZX>7*=oo°g(0)(0.365)衛(wèi)—c?4=g”(心見(jiàn))=(2.093)(5⑷n人=4.65Con

7、siderthecircuitinFigure4withtransistorparametersQI:VthX-1.2V,k]=0.5mA/V2,A,=0,ID1=0.2mAandQ2:Vthl=1.2V,k2=0.2mA/V2,A2=0,ID2=0.5mA.(a)Plotthesmall-signalequivalentcircuit,(b)Determinethesmall-signalvoltagegainAv=vf/v；.1.如圖，已知電晶體QI之規(guī)格為Vthx=1.2V,k,=0.5mA/V2,=0,ID1=0.2mA,電晶體Q2之規(guī)格為V{h2=1,2

8、V,k2=