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1、碩士學(xué)位論文ABSTRACTABSTRACTToimproveanti—ablationbehavioroftheC／Ccomposite，thisreaserchdepositedtheZrCorZrC／SiCfilmfortheprotectfilmontheC／Ccomposition．ZrCfilmwasdepositedbychemicalvapordepositionwithZrCl4-CH4一Arsystem，andZrCl4wastransportedinsolid．ThecharactersoftheSO-preparedZrCfilmwereanalyzedbych
2、emicalthermodynamicscalculatingandexperimenting．Theeffectsofpreparationparametersonthecomposition，surfacemorphologyandmicrostructureofZrCcoatingwerestudiedbyX．raydiffractometry,energydispersivespectroscopyandscanningelectronmicroscopyandsoon，suchasdepositiontemperature，H2gasflux，C／Zrratio，deposi
3、tionpressanddepositionposition，andsetdowntheperfactpreparationtechnics．Themechanicalbehaviorandtheablationbehaviorofthedifferentmicrostructureswerestudiedrespectivelybynano．indetationtestandDR6130oxyacetylenetorch．TheSiCfilmwasregardasthetransitionflimtodecreasetheendogeneticforce．Thereasurchfin
4、dasfollowed：thepreparationmethodinthisreasurchfallsdownthechemicalVapordepositiontemperature．AnditiSeasytogetwidespread、homogeneousZ圮filminstructure．Withthetempreturegoingup，H2gasfluxincreasing，C／Zrratiodecreasinganddepositionpressdecreasing，Ccontentdecreases，thecrystalplane(200)ofZrCfilmgrowspr
5、eferentially,thedensityincreases，therigidityandelasticitysimulationincreasesrespectively11．67and6．32times．a(chǎn)blationratioinlineandmassdecreasesrespectivelybyalargemarginthantheworse．T11edepositionratiogoesupwiththetempretureandtheC／Zrratioincreasing．However,thedepositionratioincreasesfirstly,andth
6、endecreaseswiththeH2gasfluxincreasing．TheresultsshowthattheperfactpreparationtechnicsinpreparatingZrCfilm：thetempreture：1450-1600℃；C／Zr=1；C／H≤1／15；Thedepositionpress：3～5KPa．RelativetothesingleZrCfilm，thecompositefilmchangesunconspicuousinablationratioinline，butdecreases73％inablationratioinmass，a
7、nddiminishinablationcrack．Asaresult，theSiCfilmregardsasthetransitionflimdecreasetheendogeneticforcebetweentheITABSTRACTbehavior碩士學(xué)位論文目錄目錄摘要????????????????????．IABSTRACT．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．
