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1、DTS4501P-Channel40V(D-S)175°CMOSFETFEATURESPRODUCTSUMMARY?Halogen-freeAccordingtoIEC61249-2-21VDS(V)-40DefinitionRDS(on)(?)atVGS=-10V0.083?TrenchFET?PowerMOSFETRDS(on)(?)atVGS=-4.5V0.110?AEC-Q101QualifiedcID(A)-3.6?100%RgandUISTestedConfigurationSingle?Complia
2、nttoRoHSDirective2002/95/ECTO-236S(SOT-23)G1G3DS2TopViewDDTS4501P-ChannelMOSFETORDERINGINFORMATIONPackageSOT-23Lead(Pb)-freeandHalogen-freeDTS4501ABSOLUTEMAXIMUMRATINGS(TC=25°C,unlessotherwisenoted)PARAMETERSYMBOLLIMITUNITDrain-SourceVoltageVDS-40VGate-SourceV
3、oltageVGS±20TC=25°C-3.6ContinuousDrainCurrentIDTC=125°C-2.6ContinuousSourceCurrent(DiodeConduction)IS-3.6APulsedDrainCurrentaIDM-18SinglePulseAvalancheCurrentIAS-12L=0.1mHSinglePulseAvalancheEnergyEAS7.2mJTC=25°C3MaximumPowerDissipationaPDWTC=125°C1OperatingJu
4、nctionandStorageTemperatureRangeTJ,Tstg-55to+175°CTHERMALRESISTANCERATINGSPARAMETERSYMBOLLIMITUNITJunction-to-AmbientPCBMountbRthJA166°C/WJunction-to-Foot(Drain)RthJF50Notesa.Pulsetest;pulsewidth?300μs,dutycycle?2%.b.Whenmountedon1"squarePCB(FR-4material).c.Pa
5、rametricverificationongoing.1DTS4501SPECIFICATIONS(TC=25°C,unlessotherwisenoted)PARAMETERSYMBOLTESTCONDITIONSMIN.TYP.MAX.UNITStaticDrain-SourceBreakdownVoltageVDSVGS=0,ID=-250μA-40--VGate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250μA-1.5-2.0-2.5Gate-SourceLea
6、kageIGSSVDS=0V,VGS=±20V--±100nAVGS=0VVDS=-40V---1ZeroGateVoltageDrainCurrentIDSSVGS=0VVDS=-40V,TJ=125°C---50μAVGS=0VVDS=-40V,TJ=175°C---150On-StateDrainCurrentaID(on)VGS=-10VVDS???-5V-10--AVGS=-10VID=-3A-0.0710.083VGS=-10VID=-3A,TJ=125°C--0.116Drain-SourceOn-S
7、tateResistanceaRDS(on)?VGS=-10VID=-3A,TJ=175°C--0.139VGS=-4.5VID=-2.4A-0.1000.110ForwardTransconductancebgfsVDS=-5V,ID=-3A-8-SDynamicbInputCapacitanceCiss-493620OutputCapacitanceCossVGS=0VVDS=-25V,f=1MHz-7695pFReverseTransferCapacitanceCrss-5165TotalGateCharge
8、cQg-10.516Gate-SourceChargecQgsVGS=-10VVDS=-20V,ID=-3A-1.8-nCGate-DrainChargecQgd-2.6-GateResistanceRgf=1MHz51015?Turn-OnDelayTimectd(on)-58RiseTimectrV=-20V,R=6.7?-1117DDLnsTurn-O
