Potential of amorphous and microcrystalline silicon solar cells

Potential of amorphous and microcrystalline silicon solar cells

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時(shí)間:2019-06-03

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1、PublishedinThinSolidFilms451-452,518-524,20041whichshouldbeusedforanyreferencetothisworkPotentialofamorphousandmicrocrystallinesiliconsolarcellsa,b,aa,ba¨acaJ.Meier*,J.Spitznagel,U.Kroll,C.Bucher,S.Fay,T.Moriarty,A.ShahaInstitutdeMicrotechnique,CH-2000Neuchatel,Switzer

2、landbUnaxisSPTecSA,CH-2000Neuchatel,SwitzerlandcNationalRenewableEnergyLaboratory,Golden,CO80401,USAAbstractLowpressurechemicalvapourdeposition(LP-CVD)ZnOasfronttransparentconductiveoxide(TCO),developedatIMT,hasexcellentlight-trappingpropertiesfora-Si:Hp-i-nsingle-junc

3、tionand‘micromorph’(amorphousymicrocrystallinesilicon)tandemsolarcells.Astabilizedrecordefficiencyof9.47%hasindependentlybeenconfirmedbyNRELforanamorphoussiliconsingle-2junctionp-i-ncell(;1cm)depositedonLP-CVDZnOcoatedglass.Micromorphtandemcellswithaninitialefficiencyo

4、f12.3%showafterlight-soakingastableperformanceof10.8%.Themonolithicseriesconnectionbylaser-scribingformodulefabricationhasbeendevelopedatIMTaswell,forbothamorphoussingle-junctionandmicromorphtandemcellsincombination2withtheLP-CVDZnOtechnique.Mini-modules(areasbetween22

5、and24cm)withanapertureefficiencyof8.7%inthecaseofamorphoussingle-junctionp-i-ncells(independentlyconfirmedbyNREL),andof9.8%inthecaseofmicromorphtandemcells,havebeenobtained.MicromorphtandemcellswithanintermediateTCOreflectorbetweentheamorphoustopandthemicrocrystallineb

6、ottomcellshowanalmoststableperformance(hs10.7%)withrespecttolight-soaking.Keywords:Amorphoussilicon;Microcrystallinesilicon;Thin-filmsiliconsolarcells;Light-trapping;LP-CVDZnO;VHF-PECVD1.Introductionlow-costmaterial.TheLP-CVDdepositiontechniqueisasimpleprocesswithdepos

7、itionratesofover2nmysmakingupscalingtoareasof1m2easilyachievable.InThecapabilityoflight-trappingoftransparentcon-ductiveoxides(TCOs)isfundamentalfortheefficiencyaddition,theLP-CVDprocessleadsdirectlytoanas-ofthin-filmsiliconsolarcells.Ahightransparency,agrownhighsurfac

8、etexturingoftheZnOfilms.Further-highelectricalconductivityandahighscatteringabilitymore,theinvolvedlowprocesstemperat

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