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1、AbstractFabricatingmulti-junctionsolarcellsisoneofkeystrategiesto1mproVetneconVersionefficiencyofsiliconbasedthinfilmsolarcells·Inthispaper,鋤orphoussilicongenllani啪thinfilms，whichcanbeusedasintrinsiclayerofmlddlecell,waspreparedbyRF．PECVDunderhighpressureinordertoachieVeahlghdeposltlonra
2、te．Basedonincreasingdepositrateandlowcostofsourcinggas(ge衄鋤eandsilanewasused)，amorphoussilicongermaniumsolarcellsw盯eobtained,meetingmerequirementsoftriple-junctiontandemsolarcell·Themaincon‘ent8areasfollows：．(1)Theoptimizationofamorphoussilicongermaniumthinfilmatlowdepositionrate．一Influe
3、nceofprocessparametersonpropertiesofthinfilmweresystematicallyinvestigatedunderlowpressurecondition．Byadjustinggermaneconcen‘ratlonandRFpower，thegemani啪contentofthinfilmcanbecontrolled·Hydrogendilutloncanimprovetheuniformityofcontentsandmicro-structureaswellasbondmgtom·Thea．SiGematerials
4、weredepositedat0．8一lflds，withgermaniumcontentof40％，Dhotosensitivitylargerthan2×105andopticalgapof1·58eV·a‘SiGefilmdeposltedatlowratec眥beoptimizedoverawiderangeofprocesswindow·(21Theoptimizationofamorphoussilicongermaniumthinfilmunderhj班pressure．Comparedt0mecaseoflowpressure，thedeposition
5、rateofa-SiGethinfilmwasraised衄eetimeshigherbyincreasingpressureandpow盯denslty·I'heinfluencesofge眥aneconcentration，plasmapower，pressure，hydrogendllutionrateandresidenttimeonfilmpropertiesunderhighpressureprocesswasstudled·Themainresultsareconcludedasfollows：(a)MatchinggermaniumcontentandP
6、la8mapower．Over30％germaniumcontentcallsforplasmaPowerlessthan40W．(b)Matchingplasmapowerandgaspressure．3Torrpressurewasprel咐edaccordingwith40Wpower，inordertoavoidionbombardmenttothefilm．fc)Increasinghydrogendilutionwasnecessaryforoptimizingm1∞stmctureandAbstractbondingform．(d)Propertotalf
7、lowratewasusedtoattainproperresidenttimeofgas．Eventually，a-SiGematerialwithopticalgapof1．62eVandphotosensitivitymorethan103wasfabricatedunderhi曲pressurecondition．Withthisprocess，thedepositionratewasenhancedtO3．5·4JXJs．twotimeshigherthanthecaseoflowpressuredeposition．Never
