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1、OrganicElectronics7(2006)276–286www.elsevier.com/locate/orgelDi?erencesofinterfaceandbulktransportpropertiesinpolymer?eld-e?ectdevicesS.Grecu,M.Roggenbuck,A.Opitz,W.Bru¨tting*ExperimentalphysikIV,Universita¨tAugsburg,86135Augsburg,GermanyReceived8July2005;receivedi
2、nrevisedform23February2006;accepted15March2006Availableonline18April2006AbstractThein?uenceofsubstratetreatmentwithself-assembledmonolayersandthermalannealingwasanalysedbyelectricalandstructuralmeasurementson?eld-e?ecttransistors(FETs)andmetal–insulator–semiconduct
3、or(MIS)diodesusingpoly(3-hexylthiophene)(P3HT)asasemiconductingpolymerandSi/SiO2wafersasasubstrate.Itisfoundthatsurfacetreatmentusingsilanisingagentslikehexamethyldisilazane(HMDS)andoctadecyltrichlorosi-lane(OTS)canincreasethe?eld-e?ectmobilitybyuptoafactorof50,rea
4、chingvaluesinsaturationofmorethan224·10cm/Vsatroomtemperature.Whilethereisaclearcorrelationbetweentheobtained?eld-e?ectmobilityandthecontactangleofwateronthetreatedsubstrates,X-raydi?ractionandcapacitancemeasurementsonMISdiodesshowthatstructuralandelectricalproper
5、tiesinthebulkoftheP3HT?lmsarenotin?uencedbythesurfacetreatment.Ontheotherhand,thermalannealingisfoundtocauseanincreaseofgrainsize,bulkrelaxationfrequencyandtherebyofthemobilityperpendiculartotheSiO2/P3HTinterface,buthasverylittlein?uenceonthe?eld-e?ectmobility.Temp
6、eraturedependentinvestigationsonMISdiodesandFETsshowthatthetransportperpendiculartothesubstrateplaneisther-mallyactivatedandcanbedescribedbyhoppinginaGaussiandensityofstates,whereasthe?eld-e?ectmobilityinthesubstrateplaneisalmosttemperatureindependentoverawiderange
7、.Thus,ourinvestigationsrevealsigni?cantdi?erencesbetweeninterfaceandbulktransportpropertiesinpolymer?eld-e?ectdevices.ó2006ElsevierB.V.Allrightsreserved.PACS:61.41.+e;61.10.Eq;72.80.Le;73.61.Ph;82.35.GhKeywords:Organictransistor;MISdiode;Self-assembledmonolayer;Pol
8、ythiophene;P3HT1.Introductionincombinationwithlow-costsolutionprocessingmakethemattractivecandidatesforthefabricationInrecentyearsconjugatedpolym
