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1、THEMICROMORPHSOLARCELL:EXTENDINGA-SI:HTECHNOLOGYTOWARDSTHINFILMCRYSTALLINESILICOND.Fischer,S.Dubail,J.A.AnnaS&an,N.PellatonVaucher,R.PI&z,Ch.Hof,U.Kroll,J.M&r,P.Tomes,H.Keppner,N.Wyrsch,M.Go&,A.Shah,K:D.UfertlnstitutdeMicrotechnique,UniversitgdeNeuch&l,RueBreguet2,2000NeuchBtel,SwitzerlandSiemensS
2、olar.FrankfurterRing,80000Miinchen,GermanyAbstractmaintained(low-costsubstrates,largeareadeposition,lowtemperatureprocessing).ThismustbekeptinmindRecentprogressofsolarcellsbasedonplasmawhencomparingthemicromorphcelltootherformsofthindepositedhydrogenatedmicrocrystallinesilicon(PC-filmcrystallinece
3、lls[3],orotherapproachestorealizeSi:H),aswellasoncombineda-Si:H/pc-Si:Hstackeda-Si:H/crystallinesilicontandemcells[2].micromorphsolarcellsisreported.kc-Si:Hp-i-ncellswithathicknessof3.6pm,depositedwiththeuseofaMicrocrystallinep-i-nsolarcellsgas-purifier,areshowntohaveashort-circuitcurrentofover25m
4、Alcm2,andastableefficiencyof7.7%.Hydrogenatedmicrocrystallinesilicon(Kc-Si:H)isa-Si:H/pc-Si:Htandemcellswith13%initial,andwith10%preparedbyplasmaCVDfromhydrogen-dilutedsilane.degradedstateefficiencyarealsodemonstrated.InGrowthofpc-Si:Hdoesnotrequireanypre-orientationaddition,methodstofurtherincrea
5、setheefficiencyofthroughthesubstrate,andtakesplaceatasubstratecombineda-Si:H/pc-Si:Hsolarcellsarediscussed.Thistemperatureofabout200°C.ThismakesitpossibletoincludestheintroductionofaZnOreflectorlayerbetweenusesubstratematerialslikeglassorplastic,ortodeposita-Si:Handpc-Si:Hcomponentcells,anewconcep
6、tofpc-Si:Hdirectlyontoa-Si:Htopcells,asrequiredforthewhichfirstexperimentalresultsaregiven.fabricationofmonolithictandemstructures(seebelow).InthepresentworkKc-Si:HisdepositedbyusingIntroductionplasmaexcitationfrequenciesintheVeryHighFrequency(VHF)range.TheuseofVHFfrequencydepositionhasbeenshownto
7、favorthegrowthrateandWhiletheefficiencyofa-Si:Hbasedsolarcellsthegrainsizeofpc-Si:HascomparedtomaterialcontinuestoincreaseincrementallythroughmultipleobtainedbythestandardRFdischarge[4].Inthepresenttechnologicalr
