Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors

Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors

ID：40720451

大小：1.40 MB

頁數(shù)：24頁

時間：2019-08-06

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1、DE-EE0007361Low-CostIII-VPVMaterialsbyCl-CSVTBoettcherFinalReportProjectTitle:Low-CostIII-VPhotovoltaicMaterialsbyChlorideVaporTransportDepositionUsingSafeSolidPrecursorsProjectPeriod:6/15/16–10/31/17ProjectBudget:$225,000+$56,486costshareSubmissionDate:4/18/18Recipient:ShannonBoettcher

2、,UniversityofOregonAddress:Dept.ChemistryandBiochemistry1253UniversityofOregonEugene,OR97403AwardNumber:DE-EE0007361ProjectTeam:UniversityofOregon,LawrenceBerkeleyNationalLaboratoryMolecularFoundry,MalachiteTechnologiesInc.Contacts:ShannonBoettcherAssociateProfessor,ChemistryPhone:541-3

3、46-2543Fax:541-346-4643Email:swb@uoregon.eduShaulAloniStaffScientistLawrenceBerkeleyLabsPhone:510-486-7452Email:saloni@lbl.govRobertWeissMalachiteTechnologiesPhone:415-307-4598Email:rweiss@malachitetech.comPage1of24DE-EE0007361Low-CostIII-VPVMaterialsbyCl-CSVTBoettcherExecutiveSummary:S

4、i-basedphotovoltaicdevicesdominatethemarket.Asphotovoltaic(PV)manufacturingcostshaveplummeted,technologieswhichincreaseefficiencyhavebecomecritical.SicellefficienciesarenearingtheoreticallimitsandSi-basedPVmodulesareunlikelytoreachthe25-30%efficiencyrange.1TheuseofIII-Vsemiconductorsisa

5、nobvioustechnicalsolutiontoimproveefficiency,especiallyiftheycanbeintegrateddirectlywithexistingSitechnologyastandems.Highcoefficientsoflightabsorptionalongwithtunablebandgapsandlatticeconstantshaveresultedinrecordconversionefficienciesforbothone-sunandconcentratorPVapplications.GaAs,fo

6、rexample,hasbeenusedtomanufacturesingle-junctionphotovoltaicswithworld-recordefficienciesof28.8%atonesun.2However,costsforIII-Vsmustbedramaticallyreducedtoproducecost-effective,high-efficiencyPVsolutions.III-Vcostsarecontrolledbytwofactors:semiconductorgrowthandthesubstrate.III-Vgrowthi

7、sdominatedtodaybymetal-organicvaporphaseepitaxy(MOVPE)withalesserroleplayedbymolecularbeamepitaxy(MBE).MOVPEcostsarehighduetotheexpenseandlowutilization(~30%)ofprecursors,modestgrowthrates(~100nmmin-1),equipmentcomplexity,andsafetyinfrastructureneededtohandletoxic,pyrophoricgas

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