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1、REVIEWSPiezotronicsandpiezo-phototronicsforadaptiveelectronicsandoptoelectronicsWenzhuoWu1,2andZhongLinWang1,3Low-dimensionalpiezoelectricsemiconductornanomaterials,suchasZnOandGaN,havesuperiormechanicalpropertiesandcanbeintegratedintoflexibledevicesthatcanbesubjectedtol
2、argestrain.Moreimportantly,thecouplingbetweenpiezoelectricpolarizationandsemiconductorproperties(forexample,electronictransportandphotoexcitation)inthesematerialsgivesrisetounprecedenteddevicecharacteristics.Thishasincreasedresearchinterestintheemergingfieldsofpiezotroni
3、csandpiezo-phototronics,whichoffernewmeansofmanipulatingcharge-carriertransport,generation,recombinationorseparationinthecontrolledoperationofflexibledevicesthroughtheapplicationofexternalmechanicalstimuli.Wereviewtherecentprogressinadvancingourfundamentalunderstandingan
4、dinrealizingpracticalapplicationsofpiezotronicsandpiezo-phototronics,andprovideanin-depthdiscussionoffutureresearchdirections.Theseamlessandadaptiveinteractionsbetweenfunc?thintransitionmetaldichalcogenides(TMDCs)),tionaldevicesandtheirenvironment(forexample,becausetheir
5、low?dimensionalgeometriesandsuperiorthehumanbody)arecrucialforadvancingemergingmechanicalpropertiesfacilitatetheirintegrationintotechnologies,suchaswearableelectronics,robotics,theflexibledevicesthatcanpotentiallysustainlargestrain.InternetofThings,biomedicalengineeringa
6、ndhuman–Forexample,ZnOnanowirescantolerate5–7%strainmachineinterfacing1,2.Althoughmechanicalsignalsarewithoutplasticdeformation14,15,andmonolayerMoS2inherentintheseapplications,electricalmanipulationcansustain11%in?planestrain16.Moreimportantly,ofchargecarriersistheimpor
7、tantphysicalprocessinthelongoverlookedcouplingbetweenpiezoelectricstate?of?the?artsemiconductortechnology3,4andinpolarizationandsemiconductorpropertiesintheseemergingnanodevices5–11.Therefore,mechanicalstim?materialsgivesrisetobothnovelfundamentalpheno?ulineedtobeconvert
8、edtoelectricalsignalstobesensedmenaandunprecedenteddeviceapplications,which1SchoolofMaterialsSciencebya
