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1、Then,inordertogettingspecimenwhichhaveexcellentelectricalpropertiesinalowsinteringtenperature,aamountofCuOwasaddedintoPZT-PNN-PZNquaternarypiezoelectricceramics.TheexperimentalresultsshowthattheaddofCuOdidnotchangethemaincrystalstructure,andcouldclearlyimprovedensity.Wh
2、enlmol%CuOwasaddedintospecimen,thepiezoelectricconstant(J33,relativedielectricconstantdielectriclosstan8ofspecimenwhichwassinteredat950Cfor4hareasfollows:d33=41lpc/N,£;/wo=2449,tan§=1.86%.ThemethodofaddedCuOcanlowerthesinteringtenperatureofPZl^PNN-PZNquaternarypiezoelec
3、tricceramics,atthesametimehavebetterelectricalproperties.Finally,Low-temperaturesinteringof(a-x)Pb(Zro48Tio.52)03-bPb(Nii/3Nb2/3)O3-CPb(Zni/3Nb2^)O3-xPb(Fe2/3Wia)O3(a+b+c+x=l,0.064、electricmaterialsPb(Fe2/3Wi/3)C)3(PFW)asasinteringaid.TheeffectsofPFWcontentonthethedensification,microstructure,phasestructure,dielectricandpiezoelectricpropertiesoftheceramicswereinvestigated.Thesinteringteriperaturewasreducedfrom1180C(withoutPFWaddition)to940Cwhenthe
5、materialwasPFW-doped.PFW-dopingincreasedthesintereddensityandtheaveragegrainsizeofPFW-PNN-PZN-PZTceramics.Theceramicssinteredat940Cfor4hwithx=0.08exhibitedfavorableproperties,whichwerelistedasfollows:d33=496pC/N,eT33/so=3119,tan8=2.1%andlc=242C.Thesevaluesindicatedthatt
6、henewlydevelopedcompositionmightbesuitableformultilayerpiezoelectricdevicesapplication.KEYWORDS:Low-temperaturesintering,piezoelectricceramics,PZT-PNN-PZN,liquidphase^*5I■'匕11?1研究背景及意義11?2低溫?zé)Y(jié)技術(shù)11.2.1改變配方11.2.2改進工藝21.3液相燒結(jié)41.4含鉛壓電陶瓷71.4.1壓電陶瓷的軟性摻雜和硬性摻雜71.4.2低溫?zé)Y(jié)壓電陶瓷的研究現(xiàn)
7、狀91.4.3低溫壓電陶瓷的應(yīng)用141?5課題的提出及研究內(nèi)容14第二章實驗過程與測試162.1實驗原料及儀器162.2工藝流程172.3性能測試18第三章通過改變化學(xué)計量比降低PNN-PZN-PZT燒結(jié)溫度203.1弓I口203.2不同PbQ含量對PNN-PZN-PZT四元系壓電陶瓷性能的影響203.2.1不同PbQ含量對一定Ni過量的PNN-PZN-PZT四元系壓電陶瓷性能的影響203.2.2不同Pb:O含量對一定Ni、Zn過量的PNN-PZN-PZT四元系壓電陶瓷性能的影響233.3工藝對PNN-PZN-PZT四元系壓電陶瓷性能
8、的影響263.3.1燒結(jié)工藝對一定Ni過量的PNN-PZN-PZT四元系壓電陶瓷性能的影響???????????????????????????????????????????????????????????????26