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1、高靈敏度InAs/AlSb量子阱的霍爾器件(英文)武利翻苗瑞霞李永峰楊小峰西安郵電大學(xué)電子工程學(xué)院摘要：用分子束外延在GaAs(001)襯底上生長了兩個量子阱結(jié)構(gòu)的霍爾器件，一個是沒有摻雜的量子阱結(jié)構(gòu)，一個是Si-6摻雜的量子阱結(jié)構(gòu)。研究了霍爾器件的面電子濃度和電子遷移率與溫度的關(guān)系。結(jié)果表明，在300K下，Si-5摻雜的量子阱結(jié)構(gòu)的電子遷移率高達25000cm2?V1?護，并且該器件輸入電阻和輸出電阻較低。同時，Si-5摻雜的量子阱結(jié)構(gòu)霍爾器件的敏感度好于沒有摻雜的量子阱結(jié)構(gòu)霍爾器件。關(guān)鍵詞：霍爾器件;量子阱;&摻雜;分子束外延;作者簡介：武利翻(1980-)
2、，女，山西忻州人，博士研究生，講師，2006年于重慶郵電大學(xué)獲得碩士學(xué)位，主要從事III-V族HEMT、傳感器等半導(dǎo)體器件的研究。E-mail:wulf0608@163.com收稿日期:2017-05-05基金：國家自然科學(xué)基金青年基金(51302215)HighSensitivityHallDeviceswithAlSb/InAsQuantumWellStructureWULi-fanMIAORui-xiaLIYong-fengYANGXiao-fengSchoolofElectronicEngineering,Xi'anUniversityofPostsan
3、dTelecommunications;Abstract：AnunintentionallydopedAlSb/InAsquantumwell(QW)structureandaSi-5dopedquantumwellstructureonGaAs(001)substratesweregrownbymolecularbeamepitaxy(MBE).Thedependenceofsheetelectrondensityandelectronmobilityonthemeasurementtemperaturewereinvestigated.Itisfoundth
4、a.telectronmobilityashighas25000cm2?V1?s1hasbeenachievedfor300KintheSi-5dopedquantumwellstrueture.TheHalldeviceswithhighsensitivityandgoodtemperaturestabilitywerefabricatedbasedontheSi~5dopedAlSb/TnAsquantumwel1structures.TheirsensitivityismarkedlysuperiortoHalldevicesofanunintention
5、allydopedAlSb/lnAsquantumwell.Keyword：Hal1device;quantumwel1;§-doping;molecularbeamepitaxy;Received：2017-05-051IntroductionTheHalldevicesworkontheprincipleoftheclassicalHalleffects.TheyhavebeenwidelystudiedfortheapplicationsinmagneticsensorsafterthefirsgenerationofHal1magneticsensors
6、wasfabricatedinthemid-1950s[1-2]?Thesensorshavebeendevelopingquicklyalongwiththe?Inaddition,Sb(AE=1.35eotherInAsmaterial?V?sat300K)andhighelectronprogressofmaterialgrowthtechnology,suchasmolecularbeamepitaxy(MBE)andmetal-organicchemicalvapordeposition(M0CVD)alargeconductionbanddiscon
7、tinuitybetweenInAsandAlV)providesthedeepestquantumwe11savailableforanylattice-matchedlll-Vheterostrueture[3],byvirtueofthehighelectronmobility(30000cmvelocity(4X10cm?s)[4],However,therearestillmanychallengestoobtainhighsensitivityHalldevices.Ontheonehand,bythelackofzineblendeinsulati
8、ngsubstrates
