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1、第37卷第3期穗有金屬2013年5月Vo1.37No.3CHINESEJOURNALOFRAREMETALSMav2013高真空脈沖激光沉積Ceo2(111)/Si(111)薄膜的結(jié)構(gòu)與形貌研究孫小慶,魏峰,楊志民,陳秋云,陳軍(1.北京有色金屬研究總院先進(jìn)電子材料研究所,北京100088;2.表面物理與化學(xué)重點實驗室,四川綿陽621907)摘要:在高真空條件下,采用脈沖激光沉積法在si(111)襯底上制備了高度(111)取向的CeO2薄膜。使用反射高能電子衍射儀對薄膜制備過程進(jìn)行了原位監(jiān)測,衍射花樣為清晰條紋狀,顯示薄膜結(jié)晶質(zhì)量較好
2、,表面平整光滑。采用X射線衍射儀對不同襯底溫度、不同激光能量制備的薄膜進(jìn)行了結(jié)構(gòu)表征,隨著溫度升高和能量增強(qiáng),CeO2薄膜(111)峰逐漸增強(qiáng)且峰位越來越靠近標(biāo)準(zhǔn)峰位,表明CeO:薄膜的取向性變好且薄膜應(yīng)力逐漸下降。通過橢偏儀對薄膜的折射率進(jìn)行了表征,結(jié)果表明薄膜的光學(xué)性能強(qiáng)烈依賴其結(jié)晶質(zhì)量,結(jié)晶質(zhì)量最好的樣品折射率接近單晶薄膜。使用高分辨透射電鏡表征了樣品的橫斷面,照片顯示薄膜內(nèi)部原子排列有序,結(jié)晶質(zhì)量較好,部分區(qū)域與襯底取向略有偏差。關(guān)鍵詞:氧化鈰;脈沖激光沉積法;結(jié)構(gòu)特征;表面形貌;折射率doi:10.3969/j.issn.0
3、258—7076.2013.03.009中圖分類號:TB383文獻(xiàn)標(biāo)識碼:A文章編號:0258—7076(2013)03—0389—07StructureandMorphologyofCeO2FilmsDepositedonSi(111)SubstratesbyPulsedLaserDepositioninHighVacuumAtmosphereSunXiaoqing,WeiFeng,YangZhiminh,ChenQiuyun,ChenJun(1.AdvancedElectronicMaterialInstitute,General
4、ResearchInstituteforNonferrousMetals,Beijing100088,Chi—na;2.ScienceandTechnologyonSu~CacePhysicsandChemistryLaboratory,Mianyang621907,China)Abstract:Highly(111)orientedCeO2thinfilmsweredepositedonSi(111)substratesinhighvacuumatmosphereusingpulsedla—serdeposition(PLD).Th
5、egrowthbehaviorwasmonitoredbyreflectionhighenergyelectrondifraction(RHEED)insitu.Theresultsshowedthatthedifractionpatternsofthefilmswerestriatedandclear.whichmeantthatthesampleshadahishcrystalqualityandtheirsurfacewassmooth.X—raydifraetometer(XRD)wa$employedtoinvestigat
6、ethestructureofCeO2films.Asthesubstratetem—peratureandlaserenergyincreased,orientationrelationshipandcrystallizationwereimprovedandintemalstressreleased,(111)dif-fractionpeakapproachedtothepositionofstandarddifractionpeak.Thespectroscopicellipsometryindicatedthattherefr
7、activeindex0fthefilmdependedonthecrystallizationquality.TherefractiveindexofthesamplewithoptimumcrystalqualitywasquiteclosetothatofsinglecrystalCeO2film.HRTEMimagesshowedthattheas-preparedsamplerevealedagoodcrystalperformance,butaslightdeviationoforientationexistedinsom
8、eregion.Keywords:CeO2;pulsedlaserdeposition;structure;morphology;refractiveindex收稿日期:2012一o4—23;修訂日期:2012—06—2