超大規(guī)模集成電路銅互連電鍍工藝（copper interconnect plating process for very large scale integrated circuit）

超大規(guī)模集成電路銅互連電鍍工藝（copper interconnect plating process for very large scale integrated circuit）

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時(shí)間：2018-07-31

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1、超大規(guī)模集成電路銅互連電鍍工藝（Copperinterconnectplatingprocessforverylargescaleintegratedcircuit）1.doubleembeddedcopperinterconnectprocessWiththecontinuousimprovementofchipintegration,copperhasreplacedaluminumasthemainstreaminterconnecttechnologyinVLSImanufacturin

2、g.Asanalternativetoaluminum,copperwirescanreduceinterconnectimpedance,reducepowerandcost,andimprovechipintegration,devicedensity,andclockfrequency.Becauseofthecopperetchingisverydifficult,sothecopperinterconnectusingdualDamascenetechnology,alsocalled

3、DoubleTechnology(DualDamascene),Damascus1)firstdepositedathinlayerofsiliconnitride(Si3N4)asadiffusionbarrierlayerandetchingterminationlayer,2)theninthesiliconoxidedepositedonacertainthickness(SiO2),3thenthemicrohole)lithography(Via),4)onthethroughhol

4、epartetching,5)afteratrenchlithography(Trench),6)tocompleteetchedviasandtrenches,7)followedbysputtering(PVD)diffusionbarrierlayer(TaN/Ta)andcopperseedlayer(SeedLayer).TheroleofTaistoenhancetheadhesionofCuandtheseedlayerisusedasaconductivelayerplating

5、,8)aftertheplatingprocessisthecopperinterconnects,9)isthefinalannealingandchemicalmechanicalpolishing(CMP),flattenedprocessingandcleaningofcoppercoating.Electroplatingisthemainprocesstocompletecopperinterconnect.Thecopperplatingprocessofintegratedcir

6、cuitusuallyadoptselectroplatingsolutionofsulfatesystem.Thebathiscomposedofcupricsulfate,sulfuricacidandwater,whichislightblue.Whenthepowerisaddedbetweenthecopper(anode)andthesilicon(cathode),thesolutiongeneratesanelectriccurrentandformsanelectricfiel

7、d.Theanodecopperreactsintocopperionsandelectrons,andthecathodealsoreactswithformationdepositedonthesiliconsurfaceofcopperionsandelectronsnearthecathode,copperionsundertheinfluenceoftheelectricfieldfromtheanodetothecathode,andtheconcentrationoftheloss

8、ofthedirectionalmovementnearthecathode.Themainpurposeofelectroplatingistodepositadense,seamless,seamlessandotherdefectanduniformlydistributedcopperonsiliconwafer.2.theroleoforganicadditivesinelectroplatingcopperprocessThecopperplatinginasmalllocalare

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