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1、SolutionsManualtoAccompanySEMICONDUCTORDEVICESPhysicsandTechnologynd2EditionS.M.SZEUMCChairProfessorNationalChiaoTungUniversityNationalNanoDeviceLaboratoriesHsinchu,TaiwanJohnWileyandSons,IncNewYork.Chicester/Weinheim/Brisband/Singapore/Toronto1ContentsCh.1Intro
2、duction---------------------------------------------------------------------0Ch.2EnergyBandsandCarrierConcentration--------------------------------------1Ch.3CarrierTransportPhenomena--------------------------------------------------7Ch.4p-nJunction-------------
3、-------------------------------------------------------16Ch.5BipolarTransistorandRelatedDevices----------------------------------------32Ch.6MOSFETandRelatedDevices-------------------------------------------------48Ch.7MESFETandRelatedDevices--------------------
4、-----------------------------60Ch.8MicrowaveDiode,Quantum-EffectandHot-ElectronDevices---------------68Ch.9PhotonicDevices-------------------------------------------------------------73Ch.10CrystalGrowthandEpitaxy-------------------------------------------------
5、--83Ch.11FilmFormation----------------------------------------------------------------92Ch.12LithographyandEtching------------------------------------------------------99Ch.13ImpurityDoping---------------------------------------------------------------105Ch.14In
6、tegratedDevices-------------------------------------------------------------1130CHAPTER21.(a)FromFig.11a,theatomatthecenterofthecubeissurroundbyfourequidistantnearestneighborsthatlieatthecornersofatetrahedron.Thereforethedistancebetweennearestneighborsinsilicon(
7、a=5.43?)is221/21/2[(a/2)+(2a/2)]=3a/4=2.35?.(b)Forthe(100)plane,therearetwoatoms(onecentralatomand4corneratomseachcontributing1/4ofanatomforatotaloftwoatomsasshowninFig.4a)2foranareaofa,thereforewehave2-821422/a=2/(5.43×10)=6.78×10atoms/cmSimilarlywehavefor(110)
8、plane(Fig.4aandFig.6)2152(2+2×1/2+4×1/4)/2a=9.6×10atoms/cm,andfor(111)plane(Fig.4aandFig.6)?3?2142(3×1/2+3×1/6)/1/2(2a)(?÷a)==7.83×10atoms/cm.è2???3?÷2a?2÷è?2.Theheig
