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1、密級(jí)公開(kāi)分類號(hào)TG7工程碩士學(xué)位論文單晶藍(lán)寶石基片集群磁流變拋光實(shí)驗(yàn)研究陳剛指導(dǎo)教師肖強(qiáng)教授靳龍平高級(jí)工程師申請(qǐng)學(xué)位級(jí)別工程碩士工程領(lǐng)域機(jī)械工程2018年5月1日0.8nm。4）分析了亞表面損傷的形成機(jī)理，理論分析了集群磁流變拋光去除亞表面損傷的可行性，基于印壓斷裂理論，建立了亞表面損傷深度與拋光參數(shù)的關(guān)系模型，通過(guò)正交實(shí)驗(yàn)驗(yàn)證了模型的合理性以及研究了拋光參數(shù)對(duì)亞表面損傷深度的影響規(guī)律，實(shí)驗(yàn)結(jié)果表明，亞表面損傷深度隨著拋光壓力和磨粒粒徑的增大而增大，拋光壓力是決定是否產(chǎn)生亞表面損傷的關(guān)鍵因素，當(dāng)磨粒粒徑為280nm，拋光壓力為82N時(shí)，
2、拋光過(guò)程中不產(chǎn)生亞表面損傷，并且能夠去除研磨中造成的亞表面損傷，經(jīng)過(guò)100min拋光亞表面損傷深度減小至0.9nm。關(guān)鍵詞：?jiǎn)尉{(lán)寶石；集群磁流變拋光；材料去除量；表面粗糙度；亞表面損傷深度theproblemsexistingintheexperiment.Thelappingfluidformulationsandthepolishingfluidformulationswereimproved.Theclustermagnetorheologicalpolishingprocesswascarriedoutbyusingself-
3、madesilicondioxidecolloidalsolwithaparticlesizeof70nm.Theeffectsoftheconcentrationofthepolishingfluid,thepHofthepolishingfluidandthetemperatureofthepolishingfluidonthesurfaceroughnesswerestudied.Theexperimentalresultsshowthattherateofdecreaseofsurfaceroughnessdecreaseswi
4、ththedecreaseofabrasiveconcentration,increasesfirstandthendecreaseswiththeincreaseofthepolishingfluidtemperatureandpH.Whentheconcentrationofthepolishingfluidis45%,pH=11,temperatureat36℃,therateofdecreaseofsurfaceroughnessis1.65nm/minandthesurfaceroughnessis0.8nm.4)Thefor
5、mationmechanismofsubsurfacedamagewasanalyzed.Thefeasibilityofclustermagnetorheologicalpolishingtoremovesubsurfacedamagewastheoreticallyanalyzed.Basedonthetheoryofimprintfracture,therelationshipmodelbetweensubsurfacedamagedepthandpolishingparameterswasestablished.Theratio
6、nalityofthemodelwasverifiedbyorthogonalexperimentsandtheeffectsofpolishingparametersonthedepthofsubsurfacedamagewasstudied.Theexperimentalresultsshowthatthesubsurfacedamagedepthincreaseswiththeincreaseofpolishingpressureandparticlesize.polishingpressureisakeyfactorindete
7、rminingwhethersubsurfacedamageisoccurring,whentheparticlesizeis280nmandthepolishingpressureis82N,nosubsurfacedamageoccursduringpolishingandthesubsurfacedamagecausedbygrindingcanberemoved.After100minutespolishing,thesubsurfacedamagedepthisreducedto0.9nm.KeyWords:singlecry
8、stalsapphire;clustermagnetorheologicalpolishing;materialremovalamount;surfaceroughness;subsurfacedamage
