資源描述：
《嵌入式雙端口sram中讀寫干擾問(wèn)題的-研究》由會(huì)員上傳分享，免費(fèi)在線閱讀，更多相關(guān)內(nèi)容在行業(yè)資料-天天文庫(kù)。
1、上海交通大學(xué)碩士學(xué)位論文STYDYONTHEREAD/WRITE-DISTURBISSUEINEMBEDDEDDUAL-PORTSRAMABSTRACTTheembeddedStaticRandomAccessMemory(SRAM)isanimportantpartofmodernSoC;Withtheadvanceofthemanufacturingprocess,thestudyonSRAMneverstops.Dual-PortSRAM(DP-SRAM)canprovidethesystemwithahighercommunicationefficiencyandparal
2、lelcomputingcapability.Withtheenhancementofthesystemthroughput,DP-SRAMbecomesmoreandmorepopular.AimedattheRead/Write-DisturbissueinDP-SRAM,thememorycellandperipheralcircuitsoftheembeddedSRAMarefullystudied.Thecompleteread/writeoperationprocessofSRAMisclearlydescribed.ThemechanismoftheRead/Writ
3、e-Disturbissueisanalyzed,oneinstanceofTSMC28nmDP-SRAM(TSDN28HPM)issimulatedandadeterioratedwrite-disturbissueisfoundat6σvariationoftheprocess.Adetailedanalysisisfurthermade,basedonwhichaproposedword-linepulsecontroltechniquesolvestheproblem.Themainachievementsofthispaperareasbelow:Firstly,thef
4、lexibletrackingcircuitsandthecharacteristicofsenseamplifierin28nmembeddedSRAMaregiven.Secondly,awrite-failcausedbywrite-disturbinTSDN28HPMisobtainedbysimulationandtheclockskewdependencyofthewrite-disturbisalsosimulated.Thirdly,aword-linepulsecontrolstrategyisproposed.Thewrite-failisresolvedbyc
5、ontrollingtheassertiontimeandthewidthoftheword-linepulse.Usingthe28nmHPMprocessofTSMC,thepost-layoutsimulationisperformedacrossallthedesigncorners,whichshowsthemethodisfeasibleandeffective.KEYWORDS:SRAM,Dual-PortSRAM,Read/Write-Disturb,ProcessVariation,Word-LinePulseII萬(wàn)方數(shù)據(jù)上海交通大學(xué)碩士學(xué)位論文目錄摘要·····
6、·························································································································IABSTRACT·················································································································II第一章緒論············································
7、································································-1-1.1研究背景及意義····························································································-1-1.2國(guó)內(nèi)外研究現(xiàn)狀······················································
