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1、ABSTRACTAsanimportantlow-costsemiconductorfunctionalmaterialwithlargebandgap(3.37eV)andlargeexcitationbindingenergy(60meV),zincoxide(ZnO)isrecognizedaSoneofthemostpromisingmaterialsforoptoelectronicapplications.NanostructuredZnOhaSdrawnconsiderableattentionduetoitsuniqueelectrical,mechanical,andopt
2、icalproperties,inadditiontoitsapplicationsinnumerousfields,suchassolarcells,gaSsensors,piezoelectricmaterials,photoniccrystals,andoptoelectricdevices.However,therearestillthreebasicquestionsoftheZnOnanomaterial:firstly,thespecificsurfaceareaofnanoZnOmaterialsarelow;Secondly,thecontrollablepreparati
3、onoforderlynanoarrayisdifficult,andtheelectron-holerecombinationrateishighindisorderedstructures,whichleadtoalowphotoelectricalconversion.Thirdly,themechanismoftheformationofthenanostructureisstillnotclear.Asaresult,thereisofgreatsignificancetostudythepreparationofhighspecificsurfacearea.Inthiswork
4、,one—dimensionalandthree—dimensionaldifferentmorphologiesZnOnanostructurehavebeensuccessfullypreparedbyasimplehydrothermalmethod,andthemainrearchworkandresultswereaSfollowing.WithZn(N03)2andC6H12N4aSrawmaterial,theorderlyZnOnanorodarrayhaSbeensuccessfullypreparedbycontrollingtheprecursorconcentrati
5、onandreactiontime.TheresultsdemonstratedthattheoptimumconditionofpivotalcraftworkoftheZnOnanorodsarray:precursorconcentrationisO.02mol/L.thereactiontimeis4h.DuetothethinstructureandroughsurfacewhichCanabsorbmoredyesandmorereactivecenter,theZnOnanorodsarraypreparedatthisoptimumconditionshowsthebestp
6、hotoelectricperformance.TheThree·-dimensionalseaurchinZnOmicro·-nanostructurewasfirstsuccessfullypreparetedbyhydrothermalmethodinZn(Y03)2一NH3,withFTOconductiveglassaSthebase.TheZnOmicro—nanostructurecrystalissinglecrystalstructure,thelatticedistance(0001)isabout0.26nln.WeCanprepareThree-dimensional
7、seaurchinZnOmicro—nanostructurebycontrollingthereactiontemperature,reactiontimeandpHvalue.AndtheresultsIIIdemonstratedthattheoptimumconditionofpivotalcraftworkoftheZnOnanorodsarray:s:pHvalueis9,thereactiont