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1、ArchitectingPhaseChangeMemoryasaScalableDRAMAlternativeBenjaminLeey,EnginIpeky,OnurMutluz,DougBurgeryyComputerArchitectureGroupzComputerArchitectureLabMicrosoftResearchCarnegieMellonUniversityInternationalSymposiumonComputerArchitecture22June2009BenjaminC.
2、Leeetal.1::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryMemoryinTransitionIChargeMemoryBWritedatabycapturingchargeQBReaddatabydetectingvoltageVBExamples:Flash,DRAMIResistiveMemoryBWritedatabydrivingcurrentdQ=dtBRead
3、databydetectingresistanceRBExamples:PCM,MRAM,memristorBenjaminC.Leeetal.2::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryLimitsofChargeMemoryBUnscalablechargeplacementandcontrolBFlash:?oatinggatechargeBDRAM:capacitor
4、charge,transistorleakageBenjaminC.Leeetal.3::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryTowardsResistiveMemoryIScalableBProgramwithcurrent/cellsizeBMapresistancetologicalstateINon-VolatileBSetatomicstructureincell
5、BIncuractivationcostICompetitiveBAchieveviabledelay,energy,enduranceBScaletofurtherimprovemetricsBenjaminC.Leeetal.4::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryPCMDeploymentBDeployPCMonthememorybusBBeginbyco-loca
6、tingPCM,DRAMBBeginbydeployinginlow-powerplatformsBenjaminC.Leeetal.5::ISCA::22June09MotivationPhaseChangeMemoryTechnologyTechnologyParametersArchitecturePriceofScalabilityOutlineIMotivationBMemoryScalingBChargeMemoryBResistiveMemoryITechnologyBPhaseChangeM
7、emoryBTechnologyParametersBPriceofScalabilityIArchitectureBDesignObjectivesBBufferOrganizationBPartialWritesBenjaminC.Leeetal.6::ISCA::22June09MotivationPhaseChangeMemoryTechnologyTechnologyParametersArchitecturePriceofScalabilityPhaseChangeMemoryBStoredat
8、awithinphasechangematerial[Ovshinsky68]BSetphaseviacurrentpulseBDetectphaseviaresistance(amorphous/crystalline)BenjaminC.Leeetal.7::ISCA::22June09MotivationPhaseChangeMemoryTechnologyTechnologyParametersArchi
