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1、硼和磷摻雜的效應(yīng)在鋁誘發(fā)結(jié)晶上的研究探討作者羅立奇指導(dǎo)教授：黃俊達(dá)中華民101年5月30日EffectsofboronandphosphorusdopingonthealuminuminducedcrystallizationofamorphoussiliconLi-ChiLuo,Jun?DarHuangDepartmentofElectrophysics,NationalChiayiUniversity,Chiayi600,TaiwanMicroelectronicsLabAbstractEffectsoftheboro
2、nandphosphorusdopingonthealuminuminducedcrystallization(AIC)ofamorphoussilicon(a-Si:H)wasinvestigated.AICjustrequireslowtemperature(belowtheeutectictemperatureof577°C)toformcontinuouspolycrystallinesilicon(poly?Si)filmwithhighquality.Boronandphosphorusdopinginsili
3、conmaterialsareveryimportantinformingp-njunctiondiodes.Wefoundthattheboronandphosphorusatomshaveatendencytoreducethefreeenergyofnucieating,andhencemorenucleationcenterswereinitializedatshorttime.Thusthesampleswithboronorphosphorusdopinghaveashorttimetofullycrystal
4、lize,butsmallgrainsizeisobservedinthesesamples.Relatedmechanismwasinvestigatedhere.1?IntroductionInrecentyears,polycrystallinesilicon(poly-Si)hasbecomeapromisingmaterialforthinfilmsolarcell,thin-filmliquid-crystal-display,andotherapplicationsinoptoelectronicdevice
5、s.BecausePoly-Sihashighercarriermobilityascomparedtoamorphoussilicon(a?Si).Atpresent,aluminuminducedcrystallization(AIC)isanalternativeandattractiveapproachtoformPoly-Sifilmsonglasssubstratewithlargegrainsizeandpreferentialcrystalorientation.TheAICtechniqueisbased
6、onthealuminum(Al)incontactwitha-Siandtransformsamorphousintocrystallinesiliconatlow-temperaturebelowthemeltingpointofglass.Butreviewthepreviousreports,moststudiesweredevotedtothere-crystallizationofintrinsicsilicon.AICondopedsiliconfilmswasveryfew.Boronandphosphor
7、usdopinginsiliconmaterialsareveryimportantinformingp?njunctiondiodes.Furthermore,thecausedAICfilmforintrinsica-Siisp-typeduetotheincorporationofAlatom.Forthedopingofboronandphosphorus,theboronandphosphorusatomswillaffectthetransportofAlatom,leadingtodifferentbehav
8、iorincrystallization.Thusinthiswork,effectsofboronandphosphorusdopingontheAICofa-Siwasinvestigated.2?ExperimentsAICprocessisshowninFig.1.Initially,Alwas
