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1、ChemicalVaporDeposition化學(xué)氣相沉積要點(diǎn)：化學(xué)氣相淀積的基本原理－過程、反應(yīng)、速度CVD特點(diǎn)CVD裝置低壓CVD等離子體化學(xué)氣相淀積PECVD金屬有機(jī)物化學(xué)氣相沉淀（MOCVD）4.1簡介Hardestmat.-Damagedthehardnesssensor2.5mmhigh,grownin1daysingle-crystaldiamondgrownbyCVDC.S.Yanetal.,PhysicaStatusSolidi(a)201,R25(2004)].化學(xué)氣相淀積，簡稱CVD(ChemicalVaporDeposi
2、tion)是把含有構(gòu)成薄膜元素的一種或者幾種化合物或單質(zhì)氣體供給基片，借助氣相作用或在基片上的化學(xué)反應(yīng)生成所需薄膜。gasinlet?gasdecomposition?gasreaction?substrateadsorption?gasexhaust定義1)氣體分解方式gasdecomposition(1)thermaldeposition(2)plasmadeposition(3)photon(laser,UV)deposition2)CVD種類－accordingtotemp.,pressure,…CVDchemicalvapordepo
3、sitionAPCVDatmosphericpressure...LPCVDlow-pressure...VLPCVDverylowpressure…PECVDplasma-enhanced...LECVDlaser-enhanced...MOCVDmetal-organic...ECRCVDelectron-cyclotronresonance...VPEvapor-phaseepitaxy3)優(yōu)勢－advantageslowcostdielectric(poly-silicon,Si3N4,SiO2)andmetalthinfilmhigh
4、depositionratehighorlowpressurecontrolthickness,defectandresistivityhighfilmqualityLTCVDforsemiconductors,ex.,Si3N4,SiO2andepilayerlowradioactivedamageButhighdepositiontemperatureandenvironmentdamage4)沉積參數(shù)－parametersforthinfilmstructure(1)temperatureofsubstrateandchamber(2)g
5、rowthrate(3)gaspressureTheseparametersaffectonsurfacespeedoftheinvolvedatoms.OverviewnotallcomponentsarefoundinallCVDsystems:SourcegasReactsonsubstratetodepositfilm4.2化學(xué)反應(yīng)類型1.熱分解－Pyrolysis-thermaldecompositionAB(g)--->A(s)+B(g)ex:SidepositionfromSilaneat650oCSiH4(g)--->Si(s)
6、+2H2(g)usetodeposit:Al,Ti,Pb,Mo,Fe,Ni,B,Zr,C,Si,Ge,SiO2,Al2O3,MnO2,BN,Si3N4,GaN,Si1-xGex,...2.還原－ReductionoftenusingH2(metal,substrate)AX(g)+H2(g)<===>A(s)+HX(g)-oftenlowertemperaturethanpyrolysis-reversible=>canuseforcleaningtooex:Wdepositionat300oCWF6(g)+3H2(g)<===>W(s)+6H
7、F(g)-usetodeposit:Al,Ti,Sn,Ta,Nb,Cr,Mo,Fe,B,Si,Ge,TaB,TiB2,SiO2,BP,Nb3Ge,Si1-xGex,...3.氧化/氮化反應(yīng)－Oxidation/NitritionoftenusingO2/N2AX(g)+O2(g)--->AO(s)+[O]X(g)ex:SiO2depositionfromsilaneandoxygenat450oC(lowertempthanthermaloxidation)SiH4(g)+O2(g)--->SiO2(s)+2H2(g)usetodeposit:
8、Al2O3,TiO2,Ta2O5,SnO2,ZnO,...4.置換反應(yīng)－ExchangeoftenusingamoniaorwatervaporAX(
