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1、目錄目錄第一章緒論.....................................................................................................................11.1半導(dǎo)體材料SiC.................................................................................................11.2SiC厚外延的研究意義和現(xiàn)狀..........................................
2、................................31.2.1SiC厚外延的研究意義...........................................................................31.2.2SiC厚外延的研究現(xiàn)狀...........................................................................41.2.3SiC厚外延存在的問(wèn)題..............................................................
3、.............51.3本論文的主要工作............................................................................................6第二章SiC晶體同質(zhì)外延及表征..................................................................................72.1SiC晶體結(jié)構(gòu).....................................................................
4、.................................72.2SiC同質(zhì)外延方法..............................................................................................92.2.1分子束外延法.......................................................................................102.2.2液相外延法............................................
5、...............................................112.2.3化學(xué)氣相淀積法...................................................................................122.3SiC外延層的表征方法....................................................................................132.3.1顯微表征方法......................................
6、.................................................132.3.2拉曼表征方法.......................................................................................162.3.3X射線衍射............................................................................................172.3.4C-V表征..............................
7、..................................................................182.4本章小結(jié)..........................................................................................................20第三章4H-SiC外延設(shè)備、工藝及測(cè)厚方法..........................
