資源描述：
《seed layer solar cell》由會員上傳分享，免費在線閱讀，更多相關(guān)內(nèi)容在學(xué)術(shù)論文-天天文庫。
1、Seedlayerprintedcontactformationforhighlydopedboronemittersofn-typesolarcellswithfrontsidejunctionArminRichter,MatthiasH?rteis,JanBenickFraunhoferInstituteforSolarEnergySystemsISE2ndWorkshoponmetallizationofcrystallinesiliconsolarcellsKonstanz,14thApril2010?Frau
2、nhoferISEOutline￠Motivation￠Metallizationapproach￠Measuredspecificcontactresistance￠Shuntingbehaviorofthecontactformation￠Firstsolarcellresults￠Summary2?FraunhoferISEWhyn-typesiliconforsolarcellfabrication?￠Superiortoleranceoncommon￠Nolightinduceddegradationduei
3、mpurities(e.g.iron)toB-O-pairsasinp-typeCz-SiD.Macdonald,JAP2005J.Schmidt,22thEUPVSEC3?FraunhoferISEBoronEmitterPassivationAtomicLayerDepositionofAlO23￠Excellentperformanceatcelllevel￠OnlyverythinALDlayernecessaryVJFFηocsc[mV][mA/cm2][%][%]Bestcell704.541.182.42
4、3.9**ConfirmedatFraunhoferISECalLabBenicketal.,newresult4?FraunhoferISEThesolarcellstructuretexturedfrontsidefrontmetallizationSiNxantireflectioncoatingpassivationlayerp+emitter(borondoped)n-typebasen+-dopedBSFrearmetallization5?FraunhoferISEFiringstablepassivat
5、ionforp+dopedboronemittersEmitterprofile20￠Shallowindustrial-type10boronemitter:90Ω/sq)-3￠R=90?/sq19sh(cm10￠Surf.conc.:8x1019cm-318101710dopingconcentration16100.00.20.40.60.81.01.21.4depth(μm)6?FraunhoferISEFiringstablepassivationforp+dopedboronemittersAlOpassi
6、vation23280￠Passivationbyatomiclayershallow,industrial-typeborondepositedAl2O3(fA/cmemitter(90Ω/sq)passivatedby0e￠ExcellentJ0evaluesofJAl2O3(10nm)/SiNx(60nm)~45fA/cm2independentof60firingtemperature?Generallyallowsforhigh-efficiencycells4020emittersaturationcurr
7、entdensity700750800850firingtemperature(°C)7?FraunhoferISEOurfrontsidemetallizationapproach￠Necessitiesforhigh-efficiencycellsregardingfrontsidecontact:￠Lowcontactresistance￠printedseedlayer￠Highlateralconductivity￠Thinfingers￠firedseedlayer￠Apromisingapproach:d
8、=18μm2layermetallizationpbase￠platedcontact8?FraunhoferISEThetwolayermetallizationAerosoljetprintedseedlayerafterelectro-plating￠Thinseedlayer:17μmwidth￠Totalcontact
